? 2009 ixys corporation, all rights reserved features ul recognized package electrically isolated tab high peak current capability low saturation voltage mos gate turn-on - drive simplicity rugged npt structure molding epoxies meet ul 94 v-0 flammability classification applications capacitor discharge pulser circuits advantages high power density easy to mount v ces = 2500v i c25 = 30a v ce(sat) 2.9v IXGF25N250 ds99829b(05/09) symbol test conditions maximum ratings v ces t j = 25c to 150c 2500 v v cgr t j = 25c to 150c, r ge = 1m ? 2500 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 30 a i c110 t c = 110c 15 a i cm t c = 25c, v ge = 20v, 1ms 200 a ssoa v ge = 20v, t vj = 125c, r g = 20 ? i cm = 240 a (rbsoa) clamped inductive load 0.5 ? v ces p c t c = 25c 114 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 20..120/4.5..27 nm/lbin. v isol 50/60hz, 1 minute 2500 v~ weight 5g high voltage igbt for capacitor discharge applications ( electrically isolated tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 2500 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces , v ge = 0v, note 2 50 a t j = 125c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 25a, v ge = 15v, note 1 2.9 v i c = 75a 5.2 v 1 = gate 5 = collector 2 = emitter isoplus i4-pak tm 1 5 2 isolated tab
ixys reserves the right to change limits, test conditions, and dimensions. IXGF25N250 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 50a, v ce = 10v, note 1 16 26 s i c(on) v ge = 15v, v ce = 20v, note 1 240 a c ies 2970 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 98 pf c res 36 pf q g 75 nc q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 15 nc q gc 30 nc t d(on) 68 ns t r 233 ns t d(off) 209 ns t f 200 ns r thjc 1.10 c/w r thcs 0.15 c/w r thja 30 c/w resistive switching times i c = 50a, v ge = 15v v ce = 1250v, r g = 5 ? notes: 1. pulse test, t < 300 s; duty cycle, d < 2%. 2. device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 isoplus i4-pak tm (hv) (ixgf) outline
? 2009 ixys corporation, all rights reserved IXGF25N250 ixys ref: g_25n250(5p-p528)4-21-08-e fig. 1. output characteristics @ 25oc 0 15 30 45 60 75 90 105 120 135 150 012345678 v ce - volts i c - amperes v ge = 25v 20v 10v 15v fig. 2. extended output characteristics @ 25oc 0 25 50 75 100 125 150 175 200 225 250 02468101214161820 v ce - volts i c - amperes v ge = 25v 20v 15v 10v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 140 160 180 200 0246810121416 v ce - volts i c - amperes v ge = 25v 20v 10v 15v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 150a i c = 100a i c = 50a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 3 4 5 6 7 8 9 10 7 8 9 10 11 12 13 14 15 16 17 v ge - volts v ce - volts i c = 150a v ge = 15v i c = 100a i c = 50a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 45678910111213 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGF25N250 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z ( t h ) jc - oc / w fig. 7. transconductance 0 3 6 9 12 15 18 21 24 27 30 33 36 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 1020304050607080 q g - nanocoulombs v ge - volts v ce = 1250v i c = 50a i g = 10 ma fig. 9. reverse-bias safe operating area 0 40 80 120 160 200 240 280 250 500 750 1000 1250 1500 1750 2000 2250 2500 v ce - volts i c - amperes t j = 125oc r g = 10 ? dv / dt < 10v / ns fig. 10. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2009 ixys corporation, all rights reserved ixys ref: g_25n250(5p-p528)4-21-08-e IXGF25N250 fig. 12. resistive turn-on rise time vs. junction temperature 200 240 280 320 360 400 440 480 520 560 600 640 680 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 ? v ge = 15v v ce = 1250v i c = 150a i c = 50a fig. 13. resistive turn-on rise time vs. collector current 200 250 300 350 400 450 500 550 600 650 700 50 60 70 80 90 100 110 120 130 140 150 i c - amperes t r - nanoseconds t j = 125oc t j = 25oc r g = 5 ? v ge = 15v v ce = 1250v fig. 16. resistive turn-off switching times vs. collector current 170 180 190 200 210 220 230 240 250 260 50 60 70 80 90 100 110 120 130 140 150 i c - amperes t f - nanoseconds 90 105 120 135 150 165 180 195 210 225 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 1250v t j = 125oc t j = 25oc fig. 14. resistive turn-on switching times vs. gate resistance 480 500 520 540 560 580 600 620 640 660 680 700 4 6 8 101214161820 r g - ohms t r - nanoseconds 80 84 88 92 96 100 104 108 112 116 120 124 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 150a i c = 50a fig. 15. resistive turn-off switching times vs. junction temperature 190 195 200 205 210 215 220 225 230 235 240 245 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 110 120 130 140 150 160 170 180 190 200 210 220 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 1250v i c = 50a, 150a i c = 150a, 50a fig. 17. resistive turn-off switching times vs. gate resistance 200 205 210 215 220 225 230 235 240 245 250 255 260 4 6 8 10 12 14 16 18 20 r g - ohms t f - nanoseconds 100 115 130 145 160 175 190 205 220 235 250 265 280 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 150a, 50a
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